Dim-Lee Kwong received his B.S. degree in Physics and M.S. degree in Nuclear Engineering, both from the National Tsing Hua University, Taiwan, in 1977 and 1979, respectively. In 1982 he received the Ph.D. degree in Electrical Engineering from Rice University and received Best Dissertation Award. He was an Assistant Professor of Electrical Engineering Department at the University of Notre Dame during the years 1982-1985. He was a Visiting Scientist at the IBM General Technology Division, Essex Junction, Vermont during the summer of 1985 working on 4 Megabit DRAM technology. He joined The University of Texas at Austin, Microelectronics Research Center and Department of Electrical and Computer Engineering in 1985 as an Assistant Professor. He was promoted to Associate Professor in 1986 and to Full Professor in 1990.
Dr. Kwong received numerous awards including the IBM Faculty Development Award in 1984 and the Engineering Foundation Award from The University of Texas at Austin in 1994, holds the Earl N. and Margaret Brasfield Endowed Fellowship, is the author of more than 210 referred journal and more than 200 referred conference proceeding publications, and has been awarded with more than 11 U.S. patents. His current areas of research interests include rapid thermal CVD technology for the growth and deposition of semiconductor materials compatible with ULSI processes, advanced dielectrics for logic, analog, and memory devices, metal gate electrode, shallow junctions, diffusion barrier materials and processes, and diffusion modeling of ion-implanted species during rapid thermal annealing.
Dr. Kwong received numerous awards including the IBM Faculty Development Award in 1984 and the Engineering Foundation Award from The University of Texas at Austin in 1994, holds the Earl N. and Margaret Brasfield Endowed Fellowship, is the author of more than 210 referred journal and more than 200 referred conference proceeding publications, and has been awarded with more than 11 U.S. patents. His current areas of research interests include rapid thermal CVD technology for the growth and deposition of semiconductor materials compatible with ULSI processes, advanced dielectrics for logic, analog, and memory devices, metal gate electrode, shallow junctions, diffusion barrier materials and processes, and diffusion modeling of ion-implanted species during rapid thermal annealing.